益崧について
ニュース
閉じる

Flash Memory

SPI NOR

Flash Memory
  • Ultra low-power consumption, the type value of deep sleep current is as low as 60nA
  • BP protection, OTP protection, separate block area protection to ensure code security
  • High reliability: up to 100,000 Erase cycles & 20-year data retention
  • Support 1.65~2.1V, 2.7~3.6V and 1.65~3.6V wide range voltage, density 1Mbit~1Gbit
  • DFN 1.2x1.2x0.40mm, 2x3x0.40mm, 4x3x0.55mm and other small size package
  • Offers Know Good Die (KGD) products and services to support SiP package

SPI NAND

Flash Memory
  • Working voltage is 2.7V~3.6V and 1.7V~1.95V, density is 1Gbit ~ 4Gbit
  • Faster write-in performance than serial interface NOR flash
  • Quad I/O data through put reaches 480Mbit/s
  • Error checking solves the compatibility of different NAND
  • Provide WSON8 8x6mm, BGA24 packages
  • High reliability & 10-year data retention
  • Support -40°C~85°C industrial temperature range conditions

Parallel NAND

Flash Memory
  • Support 2.7V~3.6V, 1.7V~1.95V
  • 8bit ECC requirement or built-in ECC, flexibly matching different applications of the main control chip
  • Support Auto Page Program, Auto Block Erase, Page Copy and other functions
  • Industrial innovative miniaturized BGA24 6x8mm package

SD NAND

Flash Memory
  • 3.3V, LGA8 (WSON) 8x6mm small package
  • SD 2.0 protocol standard, support the access speed of Class10
  • 1Gbit~8Gbit multiple choices to meet the requirements of different product densities
  • Support working temperature range from -30°C ~ 85°C

8bit MCU

Flash Memory
  • The main frequency is 16.25 MHz
  • Maximum Flash density up to 64KB and maximum RAM density up to 2KB
  • The operating voltage ranges from 2.8V ~ 5.5V, and the operating temperature range is -40~85℃
  • The package types are LQFP 32pin, 44pin and 52pin
  • Up to 100,000 erase cycles & 20-year data retention