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Flash Memory
SPI NOR
- Ultra low-power consumption, the type value of deep sleep current is as low as 60nA
- BP protection, OTP protection, separate block area protection to ensure code security
- High reliability: up to 100,000 Erase cycles & 20-year data retention
- Support 1.65~2.1V, 2.7~3.6V and 1.65~3.6V wide range voltage, density 1Mbit~1Gbit
- DFN 1.2x1.2x0.40mm, 2x3x0.40mm, 4x3x0.55mm and other small size package
- Offers Know Good Die (KGD) products and services to support SiP package
SPI NAND
- Working voltage is 2.7V~3.6V and 1.7V~1.95V, density is 1Gbit ~ 4Gbit
- Faster write-in performance than serial interface NOR flash
- Quad I/O data through put reaches 480Mbit/s
- Error checking solves the compatibility of different NAND
- Provide WSON8 8x6mm, BGA24 packages
- High reliability & 10-year data retention
- Support -40°C~85°C industrial temperature range conditions
Parallel NAND
- Support 2.7V~3.6V, 1.7V~1.95V
- 8bit ECC requirement or built-in ECC, flexibly matching different applications of the main control chip
- Support Auto Page Program, Auto Block Erase, Page Copy and other functions
- Industrial innovative miniaturized BGA24 6x8mm package
SD NAND
- 3.3V, LGA8 (WSON) 8x6mm small package
- SD 2.0 protocol standard, support the access speed of Class10
- 1Gbit~8Gbit multiple choices to meet the requirements of different product densities
- Support working temperature range from -30°C~85°C
8bit MCU
- The main frequency is 16.25 MHz
- Maximum Flash density up to 64KB and maximum RAM density up to 2KB
- The operating voltage ranges from 2.8V~5.5V, and the operating temperature range is -40~85℃
- The package types are LQFP 32pin, 44pin and 52pin
- Up to 100,000 erase cycles & 20-year data retention